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RMWB24001 Datasheet PDF : 6 Pages
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RMWB24001
24 GHz Buffer Amplifier MMIC
PRODUCT INFORMATION
Description
The RMWB24001 is a 3-stage GaAs MMIC amplifier designed as a 17 to 24 GHz Buffer Amplifier for use in the LO
chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications.
In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz
transmit/receive chipset. The RMWB24001 utilizes Raytheon’s 0.25 µm power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier applications.
Features
4 mil substrate
Small-signal gain 15 dB (typ.)
Saturated power out 17 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 2.5 mm x 1.5 mm
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+4 V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
Tstg
Rjc
Value
+6
-2
8
110
+11
-30 to +85
-55 to +125
148
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C),
50 Ω system,
Vd = +4 V,
Quiescent Current
Idq = 70 mA
Parameter
Min Typ Max Unit
Frequency Range
17
24 GHz
Gate Supply Voltage1 (Vg)
-0.2
V
Gain (Small Signal at
Pin = 10 dBm)
13 15 18 dB
Gain Variation vs Frequency
2.0
dB
Power Output Saturated:
(Pin = +5 dBm)
14 17 19 dBm
Drain Current at Psat
80
mA
Parameter
Min Typ Max Unit
Power Added Efficiency (PAE):
at Psat
15
%
Input Return Loss
(Pin = -10 dBm)
12
dB
Output Return Loss
(Pin = -10 dBm)
12
dB
DC Detector Volltage at
Pout = 17 dBm
1.0
V
www.raytheon.com/micro
Note:
1. Typical range of gate voltage is -0.5 to 0 V to set Idq of 70 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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