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CPV363M4K

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

International Rectifier 

CPV363M4K

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ––– ––– V VGE = 0V, IC = 250µA

∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage

––– 0.45 ––– V/°C VGE = 0V, IC = 1.0mA

VCE(on)

Collector-to-Emitter Saturation Voltage ––– 1.72 2.10

IC = 6.0A

VGE = 15V

––– 2.00 ––– V IC = 11A

See Fig. 2, 5

––– 1.60 –––

IC = 6.0A, TJ = 150°C

VGE(th)

Gate Threshold Voltage

3.0 ––– 6.0

VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage

––– -13 ––– mV/°C VCE = VGE, IC = 250µA

gfe

Forward Transconductance „

3.0 6.0 ––– S VCE = 100V, IC = 12A

ICES

Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V

––– ––– 2500

VGE = 0V, VCE = 600V, TJ = 150°C

VFM

Diode Forward Voltage Drop

––– 1.4 1.7 V IC = 12A

See Fig. 13

––– 1.3 1.6

IC = 12A, TJ = 150°C

IGES

Gate-to-Emitter Leakage Current

––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Qg

Total Gate Charge (turn-on)

––– 61 91

IC = 6A

Qge

Gate - Emitter Charge (turn-on)

––– 7.4 11 nC VCC = 400V

Qgc

Gate - Collector Charge (turn-on)

––– 27 40

See Fig. 8

td(on)

Turn-On Delay Time

––– 55 –––

TJ = 25°C

tr

Rise Time

––– 24 ––– ns IC = 6.0A, VCC = 480V

td(off)

Turn-Off Delay Time

––– 107 160

VGE = 15V, RG = 23Ω

tf

Fall Time

Eon

Turn-On Switching Loss

––– 92 140

––– 0.28 –––

Energy losses include "tail" and

diode reverse recovery.

Eoff

Turn-Off Switching Loss

––– 0.10 ––– mJ See Fig. 9, 10, 18

Ets

Total Switching Loss

––– 0.39 0.50

tsc

Short Circuit Withstand Time

10 ––– ––– µs VCC = 360V, TJ = 125°C

td(on)

Turn-On Delay Time

––– 54 –––

VGE = 15V, RG = 23Ω, VCPK < 500V

TJ = 150°C, See Fig.10, 11, 18

tr

td(off)

Rise Time

Turn-Off Delay Time

––– 24 –––

––– 161 –––

ns IC = 6.0A, VCC = 480V

VGE = 15V, RG = 23Ω

tf

Fall Time

––– 244 –––

Energy losses include "tail" and

Ets

Total Switching Loss

Cies

Input Capacitance

––– 0.60 ––– mJ diode reverse recovery.

––– 740 –––

VGE = 0V

Coes

Output Capacitance

––– 100 ––– pF VCC = 30V

See Fig. 7

Cres

Reverse Transfer Capacitance

––– 9.3 –––

ƒ = 1.0MHz

trr

Diode Reverse Recovery Time

––– 42 60 ns TJ = 25°C See Fig.

––– 80 120

TJ = 125°C

14

IF = 12A

Irr

Diode Peak Reverse Recovery Current ––– 3.5 6.0 A TJ = 25°C See Fig.

––– 5.6 10

TJ = 125°C

15

VR = 200V

Qrr

Diode Reverse Recovery Charge

––– 80 180 nC TJ = 25°C See Fig.

––– 220 600

TJ = 125°C

16 di/dt=200A/µs

d i(rec)M / dt Diode Peak Rate of Fall of Recovery

During tb

––– 180 ––– A/µs TJ = 25°C See Fig.

––– 120 –––

TJ = 125°C

17

Notes:

 Repetitive rating; VGE=20V, pulse width limited

by max. junction temperature. ( See fig. 20)

‚ VCC=80%(VCES), VGE=20V, L=10µH,

RG= 23Ω, ( See fig. 19 )

„ Pulse width 5.0µs,

single shot.

ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.

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