CPV363M4K Ver la hoja de datos (PDF) - International Rectifier

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CPV363M4K

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

International Rectifier 

1500

1200

900

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

600

300

0

1

Coes

Cres

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.0 VCC = 480V

VGE = 15V

TJ = 25 °C

0.8 IC = 6.0A

0.6

0.4

0.2

0.0

0

10

20

30

40

50

RGRG, ,GGaateteRReessisistatannccee(O( Ωhm) )

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

CPV363M4K

20

VCC = 400V

I C = 6.0A

16

12

8

4

0

0

20

40

60

80

QG, Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10 RG =1203ΩOΩhm

VGE = 15V

VCC = 480V

IC= 12A

1

IC= 6A

IC= 3A

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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