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CPV363M4K

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

International Rectifier 

CPV363M4K

12

3.50

Tc = 90°C

Tj = 125°C

10

P ow er Fac tor = 0.8

2.92

M odulation D epth = 1.15

V cc = 50% of R ated Voltage

8

2.33

6

1.75

4

1.17

2

0.58

0

0.00

0.1

1

10

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

TJ = 25 oC

TJ = 150 oC

10

1

0.1

1

VGE = 15V

20µs PULSE WIDTH

10

VCE, Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

100

TJ = 150 oC

10

TJ = 25 oC

1

0.1

5

VCC = 50V

5µs PULSE WIDTH

10

15

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

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