RMWB33001 Ver la hoja de datos (PDF) - Raytheon Company
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RMWB33001 Datasheet PDF : 7 Pages
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RMWB33001
33 GHz Buffer Amplifier MMIC
Description
PRODUCT INFORMATION
The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in the LO chain
of point to point radios, point to multi- point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWB33001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier applications.
Features
Absolute
Maximum
Ratings
4 mil substrate
Small-signal gain 24 dB (typ.)
Saturated power out 19 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 3.2 mm x 1.2 mm
Parameter
Symbol
Positive DC voltage (+4 V Typical)
Vd
Negative DC voltage
Vg
Simultaneous (Vd - Vg)
Vdg
Positive DC Current
ID
RF Input Power (from 50 Ω source) PIN
Operating Baseplate Temperature
TC
Storage Temperature Range
Tstg
Thermal Resistance
Rjc
(Channel to Backside)
Value
+6
-2
8
173
+8
-30 to +85
-55 to +125
130
Units
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics Parameter
Min Typ Max Unit Parameter
Min Typ Max Unit
(At 25°C), Frequency Range
32
35 GHz Power Added Efficiency (PAE):
50 Ω system, Gate Supply Voltage (Vg)1
-0.2
Vd=+4 V,
Quiescent Current
Gain Small Signal
(Pin= -15 dBm)
20 24
Idq=112 mA
Gain Variation vs. Frequency
2.0
Power Output Saturated:
(Pin=+1 dBm)
17 19
Drain Current at Psat
120
V
at Psat
Input Return Loss
dB
(Pin=-15 dBm)
dB
Output Return Loss
(Pin=-15 dBm)
dBm DC detector voltage
at Pout=18 dBm
mA
15
%
12
dB
12
dB
1.0
V
www.raytheon.com/micro
Note:
1. Typical range of gate voltage is -0.5 to 0V to set Idq of 112 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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