RMWB33001 Ver la hoja de datos (PDF) - Raytheon Company
Número de pieza
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Lista de partido
RMWB33001 Datasheet PDF : 7 Pages
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RMWB33001
33 GHz Buffer Amplifier MMIC
Figure 2
Schematic of
Application Circuit
Drain Supply
Vd=4 V
Bond Wires
10,000 pF
100 pF
10,000 pF
100 pF
100 pF
PRODUCT INFORMATION
Bond Wires
100 pF
RF IN
MMIC Chip
RF OUT
Ground
(Back of Chip)
Bond Wires
100 pF
3 kΩ
10,000 pF
Bond Wires
100 pF
Figure 3
Chip layout and Bond
Pad Locations
Chip Size is
3.19 mm x 1.19 mm x
100 µm.
Back of chip is
RF and DC ground
Output Power
Gate Supply Vg
Detector Voltage Vdet
Note:
Detector delivers > 0.1 V DC into 3kΩ load resistor for >+18dBm output power. If output power level detection is not desired, do not connect to
detector bond pad.
Dimensions in mm
0.00
0.82
1.34
1.83
2.58
3.19
1.19
1.19
1.09
1.09
0.725
0.57
0.415
0.725
0.57
0.415
www.raytheon.com/micro
0.10
0.00
0.00 0.10
0.60
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 3
0.10
0.00
2.85 3.09 3.19
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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