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RMWB33001

33 GHz Buffer Amplifier MMIC

Raytheon Company 

RMWB33001

33 GHz Buffer Amplifier MMIC

Figure 4

Recommended

Assembly Diagram

Drain Supply

Vd= 4 V

PRODUCT INFORMATION

Die-Attach

80Au/20Sn

10,000pF

10,000pF

5mil Thick

Alumina

50-Ohm

100pF 100pF 100pF

100pF

5 mil Thick

Alumina

50-Ohm

RF

Input

RF

Output

100pF

100pF

10,000pF

3kΩ

2 mil Gap

L< 0.015”

(4 Places)

Gate Supply Vg

Output Power

Detector Voltage Vdet

Note:

Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.

Test Procedure

for biasing and

operation

CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE

AMPLIFIER CHIP.

The following sequence must be followed to properly test the amplifier.

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the grounds

of the chip carrier. Slowly apply negative gate

bias supply voltage of -1.5 V to Vg.

Step 3: Slowly apply positive drain bias supply voltage

of +4 V to Vd.

Step 4: Adjust gate bias voltage to set the quiescent

current of Idq=112 mA.

Step 5: After the bias condition is established, RF input

signal may now be applied at the appropriate

frequency band.

Step 6: Follow turn-off sequence of:

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd),

(iii) Turn down and off gate bias voltage (Vg).

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

Revised March 14, 2001

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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