HY57V161610D-I Ver la hoja de datos (PDF) - Hynix Semiconductor

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HY57V161610D-I

2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor 

HY57V161610D-I

CAPACITANCE (TA=25°C, f=1MHz)

Parameter

Pin

Symbol

Min

Max

Unit

Input capacitance

CLK

CI1

2.5

4

pF

A0 ~ A10, BA

CI2

2.5

5

pF

CKE, CS, RAS, CAS, WE, UDQM, LDQM

Data input / output capacitance DQ0 ~ DQ15

CI/O

4

6.5

pF

OUTPUT LOAD CIRCUIT

Output

Vtt=1.4V

RT=250 Ω

30pF

Output

30pF

DC Output Load Circuit

AC Output Load Circuit

DC CHARACTERISTICS I (TA= - 40°C to 85°C)

Parameter

Symbol

Min.

Max

Unit

Power Supply Voltage

VDD

3.0

3.6

V

Input leakage current

IL

-1

1

uA

Output leakage current

IO

-1

1

uA

Output high voltage

VOH

2.4

-

V

Output low voltage

VOL

-

0.4

V

Note :

1.VDD(min) is 3.15V when HY57V161610DTC-7I operates at CAS latency=2 and tCK2=8.9ns.

2.VIN = 0 to 3.6V, All other pins are not under test = 0V

3.DOUT is disabled, VOUT=0 to 3.6V

Note

1

2

3

IOH = -4mA

IOL =+4mA

Rev. 0.3/Mar. 02

5

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