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HY57V161610D-I

2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor 

HY57V161610D-I

DC CHARACTERISTICS II (TA= -40°C to 85°C, VDD=3.0V to 3.6V, VSS=0VNote1,2)

Parameter

Symbol

Test Condition

Speed

Unit

Note

-55I

-6I

-7I

-10I

Operating Current

IDD1

Burst Length=1, One bank active

tRAS ≥ tRAS(min),tRP ≥ tRP(min),

IO=0mA

130

120

110

110

mA

Precharge Standby

Current

in power down mode

IDD2P

IDD2PS

CKE ≤ VIL(max), tCK = min.

CKE ≤ VIL(max), tCK = ∞

1

mA

1

CKE ≥ VIH(min), CS ≥ VIH(min), tCK =

min

Precharge Standby

IDD2N

Input signals are changed one time during

20

Current

in non power down

2Clks. All other pins ≥ VDD-0.2V or ≤

0.2V

mA

mode

IDD2NS

CKE ≥ VIH(min), tCK = ∞

Input signals are stable.

15

Active Standby Current

in power down mode

IDD3P

IDD3PS

CKE ≤ VIL(max), tCK = min

CKE ≤ VIL(max), tCK = ∞

3.0

mA

3.0

CKE ≥ VIH(min), CS ≥ VIH(min), tCK =

min

Active Standby Current

in non power down

mode

IDD3N

Input signals are changed one time during

2CLKs. All other pins ≥ VDD-0.2V or ≤

0.2V

50

mA

IDD3NS

CKE ≥ VIH(min), tCK = ∞

Input signals are stable

30

Burst Mode Operating

Current

IDD4

tCK ≥ tCK(min),

CL=3

130

120

110

90

tRAS ≥ tRAS(min), IO=0mA

mA

2

All banks active

CL=2

110

110

110

-

Auto Refresh Current

IDD5

tRRC ≥ tRRC(min), All banks active

130

110

110

110

mA

Self Refresh Current

IDD6

CKE ≤ 0.2V

2

mA

Note :

1.VDD(min) is 3.15V when HY57V161610DTC-7I operates at CAS latency=2 and tCK2=8.9ns.

2.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.

Rev. 0.3/Mar. 02

6

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