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IKA06N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKA06N60T

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TrenchStop series

D=0.5

100K/W 0.2

0.1

0.05

1 0 -1K /W

0.02

0.01

R,(K/W) τ, (s)

0.381

1.867*10-2 6

2.57

0.645

1.454

0.062

0.186

R1

1.350

2.208*10-3

5.474*10-4

5.306*10-5

5.926*10-1

R2

C1=τ1/R1 C2=τ2/R2

single pulse

10µs 100µs 1ms 10ms 100ms 1s 1

tP, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = tp / T)

D=0.5

0.2

100K/W

0.1

0.05

1 0 -1K /W

0.02

0.01

R,(K/W) τ, (s)

0.403

1.773*10-2 6

2.57

0.938

2.33

0.071

175

1.346

1.956*10-3

4.878*10-4

4.016*10-5

5.684*10-1

R1

R2

C1=τ1/R1 C2=τ2/R2

single pulse

1 0 -2K /W

10µs 100µs 1ms 10ms 100ms 1s 1

tP, PULSE WIDTH

Figure 22. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

250ns

200ns

150ns

TJ=175°C

100ns

50ns

TJ=25°C

0ns

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR = 400V, IF = 6A,

Dynamic test circuit in Figure E)

0,5µC

0,4µC

TJ=175°C

0,3µC

0,2µC

0,1µC

TJ=25°C

0,0µC

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR = 400V, IF = 6A,

Dynamic test circuit in Figure E)

Power Semiconductors

10

Rev. 2 Oct-04

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