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IKA06N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKA06N60T

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TrenchStop series

0,6 mJ

*) Eon and Ets include losses

due to diode recovery

0,5 mJ

Ets*

0,4 mJ

0,3 mJ

0,2 mJ

0,1 mJ

Eoff

Eon*

0,0 mJ 0A 2A 4A 6A 8A 10A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=175°C,

VCE=400V, VGE=0/15V, RG=23Ω,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

Ets*

0,4 mJ

0,3 mJ

Eon*

0,2 mJ

Eoff

0,1 mJ

0,0 mJ

10Ω

30Ω

55Ω

80Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, IC = 6A,

Dynamic test circuit in Figure E)

0 ,4 m J

*) Eon and Ets include losses

due to diode recovery

0 ,3 m J

Ets*

0 ,2 m J

Eoff

0 ,1 m J

Eon*

0 ,0 m J

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=400V,

VGE = 0/15V, IC = 6A, RG = 23Ω,

Dynamic test circuit in Figure E)

0 ,5 m J

*) Eon and Ets include losses

due to diode recovery

Ets*

0 ,4 m J

0 ,3 m J

0 ,2 m J

0 ,1 m J

E off

E on*

0 ,0 m J

200V

300V

400V

500V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 6A, RG = 23Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

8

Rev. 2 Oct-04

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