IKA06N60T Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Lista de partido

IKA06N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

^

td(off)

tf

100ns

td(on)

10ns

TrenchStop series

td(off)

100ns

tf

10ns

IKA06N60T

td(on)

tr

tr

1ns

0A

3A

6A

9A 12A 15A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, RG = 23Ω,

Dynamic test circuit in Figure E)

1ns

10Ω

30Ω

50Ω

70Ω

90Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, IC = 6A,

Dynamic test circuit in Figure E)

100ns td(off)

tf

td(on)

10ns

tr

1ns

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 6A, RG = 23Ω,

Dynamic test circuit in Figure E)

6V

5V

max.

4V

typ.

3V

m in .

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.18mA)

Power Semiconductors

7

Rev. 2 Oct-04

Share Link: