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IRHN7250

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

International Rectifier 

IRHN7250/IRHN8250 Devices

Radiation Performance of Mega Rad Hard HEXFETs

Post-Radiation Characteristics

International Rectifier Radiation Hardened HEX-FETs

are tested to verify their hardness capability. The

hardness assurance program at International Recti-

fier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of 12 volts per note 6 and

figure 8a and a VDSS bias condition equal to 80%

of the device rated voltage per note 7 and figure

8b. Pre- and post-radiation limits of the devices irra-

diated to 1 x 105 Rads (Si) are identical and are pre-

sented in Table 1, column 1, IRHN7250. Device

performance limits at a post radiation level of 1 x

106 Rads (Si) are presented in Table 1, column 2,

IRHN8250. The values in Table 1 will be met for ei-

ther of the two low dose rate test circuits that are

used. Typical delta curves showing radiation re-

sponse appear in figures 1 through 5. Typical post-

radiation curves appear in figures 10 through 17.

Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 105

Rads (Si), no change in limits are specified in DC

parameters. At a radiation level of 1 x106 Rads (Si),

leakage remains low and the device is usable with

no change in drive circuitry required.

High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 1012 Rads

(Si)/Sec. Photocurrent and transient voltage wave-

forms are shown in figure 7, and the recommended

test circuit to be used is shown in figure 9.

International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion

Single Event Effects (SEE) environments. The ef-

fects on bulk silicon of the type used by Interna-

tional Rectifier on RAD HARD HEXFETs are shown

in figure 6. Single Event Effects characterization is

shown in Table 3.

Table 1. Low Dose Rate ‘ ’

Parameter

BVDSS

VGS(th)

IGSS

IGSS

IDSS

RDS(on)1

VSD

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage 

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source 

On-State Resistance One

Diode Forward Voltage 

IRHN7250 IRHN8250

100K Rads (Si) 1000K Rads (Si) Units

min. max. min. max.

Test Conditions •

200 — 200 — V

VGS = 0V, ID = 1.0 mA

2.0 4.0 1.25 4.5

VGS = VDS, ID = 1.0 mA

— 100 — 100 nA

VGS = +20V

— -100 — -100

VGS = -20V

— 25 — 50 µA VDS = 0.8 x Max Rating, VGS = 0

— 0.10 — 0.150 Ω

VGS = 12V, ID = 16A

— 1.9 — 1.9 V TC = 25°C, IS = 26A,VGS = 0V

Table 2. High Dose Rate “

Parameter

VDSS Drain-to-Source Voltage

IPP

di/dt

L1

1011 Rads (Si)/sec 1012 Rads (Si)/sec

Min. Typ Max. Min. Typ. Max. Units

Test Conditions

— — 160 — — 160 V Applied drain-to-source voltage

during gamma-dot

— 15 — — 15 — A Peak radiation induced photo-current

— — 160 — — 8.0 A/µsec Rate of rise of photo-current

1.0 — — 20 — — µH Circuit inductance required to limit di/dt

Table 3. Single Event Effects ”

Parameter Typ.

Units

BVDSS

200

V

LET (Si)

Fluence Range

Ion (MeV/mg/cm2) (ions/cm2) (µm)

Ni

28

1 x 105

~41

VDS Bias

(V)

160

VGS Bias

(V)

-5

F-349

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