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IRHN7250

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

International Rectifier 

IRHN7250/IRHN8250 Devices

Radiation Characteristics

Note: Bias Conditions during radiation; VGS = 0 Vdc, VDS = 160 Vdc

Figure 14. – Typical Output Characteristics

Pre-Radiation

Figure 15. – Typical Output Characteristics

Post-Radiation 100K Rads (Si)

Figure 16. – Typical Output Characteristics

Post-Radiation 300K Rads (Si)

Figure 17. – Typical Output Characteristics

Post-Radiation 1 Mega Rads (Si)

F-353

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