IRHN7250 Ver la hoja de datos (PDF) - International Rectifier

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IRHN7250

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

International Rectifier 

IRHN7250/IRHN8250 Devices

Pre-Radiation

ID = 26A

Figure 22. – Typical Capacitance Vs. Drain-to-Source

Voltage

Figure 23. – Typical Gate Charge Vs. Gate-to-Source

Voltage

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10us

Figure 24. – Typical Source-Drain Diode Forward

Voltage

100us

10

1ms

TC = 25o C

10ms

TJ = 150o C

FSiginugrele2P5u. l–seMaximum Safe Operating Area

1

1

10

100

VDS, Drain-to-Source Voltage (V)

1000

Figure 25. – Maximum Safe Operating Area

F-355

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