IRH7250SE Ver la hoja de datos (PDF) - International Rectifier
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IRH7250SE
International Rectifier
IRH7250SE Datasheet PDF : 8 Pages
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PD - 91778A
RADIATION HARDENED
IRH7250SE
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (TO-204AA/AE) RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) I D
IRH7250SE 100K Rads (Si)
0.10Ω 26A
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-204AE
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
26
16
A
104
150
W
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
EAS
Single Pulse Avalanche Energy ➁
500
IAR
Avalanche Current ➀
26
EAR
Repetitive Avalanche Energy ➀
15
dv/dt
Peak Diode Recovery dv/dt ➂
5.9
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
Weight
11.5 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
5/17/01
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