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IRH7250SE

200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE)

International Rectifier 

Pre-Irradiation

IRH7250SE

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅

BVDSS

VGS(th)

IGSS

IGSS

IDSS

RDS(on)

VSD

Parameter

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source „

On-State Resistance

Diode Forward Voltage „

100K Rads (Si)

Min

Max

200

—

2.0

4.5

—

100

—

-100

—

50

—

0.10

—

1.9

Units

V

nA

µA

Ω

V

Test Conditions ˆ

VGS = 0V, ID = 1.0mA

VGS = VDS, ID = 1.0mA

VGS = 20V

VGS = -20V

VDS= 160V, VGS=0V

VGS = 12V, ID = 16A

VGS = 0V, ID = 26A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

VDS (V)

MeV/(mg/cm2))

(MeV)

(µm) @VGS=0V @VGS=-5V @VGS=-10V@VGS=-15V @VGS=-20V

Cu

28

285

43

200

200

200

200

200

Br

36.8

305

39

200

200

200

180

140

250

200

150

Cu

100

Br

50

0

0

-5

-10

-15

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

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