Pre-Irradiation
IRH7250SE
6000
5000
4000
3000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
C oss
C rss
0
1
10
10
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 26A
16
12
VDS = 160V
VDS = 100V
VDS = 40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25 ° C
VGS = 0 V
1
0.4
0.8
1.2
1.6
2.0
2.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC = 25°C
TJ = 150° C
Single Pulse
1
1
10
10ms
100
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5