P4C164L-100CMB Ver la hoja de datos (PDF) - Semiconductor Corporation

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P4C164L-100CMB

ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS

Semiconductor Corporation 

P4C164

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

Temperature -8 -10 -12 -15 -20 -25 -35 45 -70 -100 Unit

Range

Commercial 200 180 170 160 155 150 145 N/A 130 125 mA

ICC Dynamic Operating Current* Industrial

N/A 190 180 170 160 155 150 N/A 145 140 mA

Military

N/A N/A 180 170 160 155 150 145 145 145 mA

*VCC = 5.5V.

Tested with outputs open.

f = Max.

Switching inputs are 0V and 3V.

CE

1

=

VIL,

CE2

=

VIH,

OE

=

VIH

DATA RETENTION CHARACTERISTICS (P4C164L, Military Temperature Only)

Symbol

Parameter

VDR

ICCDR

VCC for Data Retention

Data Retention Current

tCDR

Chip Deselect to

Data Retention Time

tR†

Operation Recovery Time

*TA = +25°C

§tRC = Read Cycle Time

†This parameter is guaranteed but not tested.

Test Condition

Min

2.0

CE

1

≥

V

CC

–

0.2V

or

CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V 0

or VIN ≤ 0.2V

tRC§

Typ.*

V=

CC

2.0V 3.0V

10

15

Max

V=

Unit

CC

2.0V 3.0V

V

200 300 µA

ns

ns

DATA RETENTION WAVEFORM

Document # SRAM115 REV F

Page 3 of 16

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