R6020FNX(2011) Ver la hoja de datos (PDF) - ROHM Semiconductor
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R6020FNX Datasheet PDF : 7 Pages
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Data Sheet
10V Drive Nch MOSFET
R6020FNX
Structure
Silicon N-channel MOSFET
Features
1) Fast reverse recovery time (trr)
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
VGSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
Application
Switching
Inner circuit
Packaging specifications
Type
Package
Bulk
Basic ordering unit (pieces) 500
R6020FNX
Absolute maximum ratings (Ta 25°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25C)
Channel temperature
Range of storage temperature
VDSS
600
V
VGSS
30
V
ID *3
20
A
IDP *1
80
A
IS *3
20
A
ISP *1
80
A
IAS *2
10
A
EAS *2
26.7
mJ
PD
50
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L≒500μH, VDD=50V, RG=25Ω, starting Tch=25°C
*3 Limited only by maximum temperature allowed.
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
∗1
(1)
(2)
(3)
1 BODY DIODE
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1/6
2011.10 - Rev.A
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