R6020FNX(2011) Ver la hoja de datos (PDF) - ROHM Semiconductor
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R6020FNX Datasheet PDF : 7 Pages
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R6020FNX
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=10V
pulsed
10
1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.1
0.01
0.01
0.1
1
10
Drain Current : ID [A]
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
1.0
0.9
Ta=25℃
pulsed
0.8
0.7
0.6
0.5
ID=10A
0.4
ID=20A
0.3
0.2
0.1
0.0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
12
Ta=25℃
10
VDD=300V
ID=20A
Pulsed
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90
Total Gate Charge : Qg [nC]
Fig.8 Source Current vs. Source-Drain Voltage
100
VGS=0V
pulsed
10
1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.1
0.01
0.0
10000
1000
100
10
0.5
1.0
1.5
2.0
Source-Drain Voltage : VSD [V]
Fig.10 Switching Characteristics
td(off)
VDD≒300V
VGS=10V
RG=10Ω
Ta=25℃
Pulsed
tf
tr
td(on)
1
0.01
0.1
1
10
100
Drain Current : ID [A]
100000
10000
Fig.12 Typical Capacitance vs. Drain-Source Voltage
Ta=25℃
f=1MHz
VGS=0V
1000
100
Ciss
Coss
10
1
0.01
Crss
0.1
1
10
100
Drain-Source Voltage : VDS [V]
1000
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4/6
2011.10 - Rev.A
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