R6020FNX(2011) Ver la hoja de datos (PDF) - ROHM Semiconductor
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R6020FNX Datasheet PDF : 7 Pages
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R6020FNX
Electrical characteristics (Ta = 25C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V(BR)DSS 600
Zero gate voltage drain current
IDSS
-
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
3.0
RDS (on*)
-
Forward transfer admittance
l Yfs l* 7.0
Input capacitance
Ciss
-
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
-
Turn-on delay time
td(on) *
-
Rise time
tr *
-
Turn-off delay time
td(off) *
-
Fall time
tf *
-
Total gate charge
Qg *
-
Gate-source charge
Qgs *
-
Gate-drain charge
Qgd *
-
*Pulsed
Typ.
-
-
-
-
0.19
-
2040
1660
70
50
70
170
40
65
15
25
Max.
100
-
100
5.0
0.25
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
nA VGS=±30V, VDS=0V
V ID=1mA, VGS=0V
uA VDS=600V, VGS=0V
V VDS=10V, ID=1mA
ID=10A, VGS=10V
S ID=10A, VDS=10V
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns ID=10A, VDD 300V
ns VGS=10V
ns RL=30
ns RG=10
nC ID=20A
nC VDD 300V
nC VGS=10V
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
Reverse Recovery Time
VSD *
-
-
trr *
75
105
*Pulsed
Max.
1.5
135
Unit
Conditions
V IS=20A, VGS=0V
ns IS=20A, di/dt=100A/s
Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.10 - Rev.A
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