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SAA4951

Memory controller

Philips Electronics 

Philips Semiconductors

Memory controller

Preliminary specification

SAA4951

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VDD

VI

Tamb

Tstg

PARAMETER

supply voltage

input voltage

operating ambient temperature

storage temperature

MIN.

−0.5

−0.5

0

−40

MAX.

+6.0

VDD + 0.5

+70

+125

UNIT

V

V

°C

°C

CHARACTERISTICS

Recommended operating conditions

SYMBOL

VDD

VI

VO

IDD

Tamb

Tj

PARAMETER

DC supply voltage

DC input voltage

DC output voltage

supply current

operating ambient temperature

junction temperature

MIN.

4.5

−0.5

−0.5

−

0

0

TYP.

5.0

−

−

50

−

−

MAX.

5.5

VDD+0.5

VDD+0.5

−

70

140

UNIT

V

V

V

mA

°C

°C

DC Characteristics

SYMBOL

PARAMETER

Tamb = +25 °C

MIN.

MAX.

vIH

TTL-input

2.0

−

HIGH level input voltage 2.0

VIL

TTL-input

−

0.8

LOW level input voltage

0.8

VOH

HIGH level output voltage 4.4

−

5.4

3.1

VOL

LOW level output voltage −

0.1

0.1

0.27

ILI

input leakage current

−

±1.0

Rpull

internal pull-up resistor

42

150

for I/O cells

35

105

UNIT VDD

(V)

V

4.5

5.5

V

4.5

5.5

V

4.5

5.5

4.5

V

4.5

5.5

4.5

µA

5.5

kΩ 4.5

5.5

TEST CONDITIONS

VI

(V)

−

OTHER

−

−

−

VIH or VIL

VIH or VIL

VDD or VSS

−

I0 = −2 µA

I0 = −2 µA

I0 = −4.0 mA/

8.0 mA (SRC)

I0 = +2 µA

I0 = +2 µA

I0 = −4.0 mA/

8.0 mA (SRC)

−

−

April 1994

20

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