BFY50 Ver la hoja de datos (PDF) - Philips Electronics
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BFY50 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistors
Product specification
BFY50; BFY51; BFY52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 35 V).
APPLICATIONS
• General purpose industrial applications.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BFY50
BFY51
BFY52
VCEO
collector-emitter voltage
BFY50
BFY51
BFY52
ICM
peak collector current
Ptot
total power dissipation
hFE
DC current gain
BFY50
BFY51
BFY52
fT
transition frequency
BFY50
BFY51; BFY52
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
Tcase ≤ 100 °C
IC = 150 mA; VCE = 10 V
IC = 50 mA; VCE = 10 V; f = 100 MHz
MIN. TYP. MAX. UNIT
−
−
80
V
−
−
60
V
−
−
40
V
−
−
35
V
−
−
30
V
−
−
20
V
−
−
1
A
−
−
800 mW
−
−
2.86 W
30
112 −
40
123 −
60
142 −
60
−
−
MHz
50
−
−
MHz
1997 Apr 22
2
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