BFY50 Ver la hoja de datos (PDF) - Philips Electronics
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Lista de partido
BFY50 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistors
Product specification
BFY50; BFY51; BFY52
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCEsat
VCEsat
VBEsat
Cc
fT
collector-emitter saturation voltage
BFY50
IC = 10 mA; IB = 1 mA
−
IC = 150 mA; IB = 15 mA
−
IC = 500 mA; IB = 50 mA
−
IC = 1 A; IB = 100 mA
−
collector-emitter saturation voltage
BFY51; BFY52
IC = 10 mA; IB = 1 mA
−
IC = 150 mA; IB = 15 mA
−
IC = 500 mA; IB = 50 mA
−
IC = 1 A; IB = 100 mA
−
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
−
IC = 150 mA; IB = 15 mA
−
IC = 500 mA; IB = 50 mA
−
collector capacitance
IC = 1 A; IB = 100 mA
−
IE = ie = 0; VCB = 10 V; f = 1 MHz −
transition frequency
BFY50
IC = 50 mA; VCE = 10 V;
f = 100 MHz; Tamb = 25 °C
60
BFY51; BFY52
50
−
200 mV
−
200 mV
−
700 mV
−
1
V
−
200 mV
−
350 mV
−
1
V
−
1.6 V
−
1.2 V
−
1.3 V
−
1.5 V
−
2
V
7
12
pF
140 −
−
−
MHz
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 150 mA; IBon = 15 mA;
−
55
−
ns
IBoff = −15 mA
−
15
−
ns
−
40
−
ns
−
360 −
ns
−
300 −
ns
−
60
−
ns
1997 Apr 22
5
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