BFY50 Ver la hoja de datos (PDF) - Philips Electronics

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BFY50

NPN medium power transistors

Philips Electronics 

Philips Semiconductors

NPN medium power transistors

Product specification

BFY50; BFY51; BFY52

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

collector-base voltage

BFY50

BFY51

BFY52

collector-emitter voltage

BFY50

BFY51

BFY52

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

Tstg

Tj

Tamb

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tamb ≤ 25 °C

Tcase ≤ 25 °C

25 °C < Tcase < 100 °C

MIN.

−

−

−

−

−

−

−

−

−

−

−

−

−

−65

−

−65

MAX.

UNIT

80

V

60

V

40

V

35

V

30

V

20

V

6

V

1

A

1

A

100

mA

800

mW

5

W

2.86

W

+150

°C

200

°C

+150

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

Rth j-c

thermal resistance from junction to ambient in free air

thermal resistance from junction to case

VALUE

220

35

UNIT

K/W

K/W

1997 Apr 22

3

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