CY62146CV30 Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY62146CV30 Datasheet PDF : 12 Pages
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CY62146CV30 MoBL™
Electrical Characteristics Over the Operating Range
Parame-
ter
Description
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
Test Conditions
IOH = –1.0 mA
IOL = 2.1mA
VCC = 2.7V
VCC = 2.7V
Min.
2.4
2.2
VIL
Input LOW Voltage
–0.3
IIX
Input Leakage Current GND < VI < VCC
–1
IOZ
Output Leakage Cur- GND < VO < VCC, Output Disabled –1
rent
ICC
VCC Operating Supply
Current
f = fMAX = 1/tRC
f = 1 MHz
VCC = 3.3V
IOUT = 0 mA
CMOS Levels
Automatic CE Pow- CE > VCC – 0.2V
ISB1
er-Down Current—
CMOS Inputs
VIN > VCC – 0.2V or VIN < 0.2V,
f = fmax (Address and Data Only),
f=0 (OE,WE,BHE and BLE)
Automatic CE Pow- CE > VCC – 0.2V
ISB2
er-Down Current— VIN > VCC – 0.2V or VIN < 0.2V,
CMOS Inputs
f = 0, Vcc=3.3V
-55
Typ.[3] Max.
0.4
VCC +
0.3V
0.8
+1
+1
12
25
1.5
3
7
15
Min.
2.4
1.8
–0.3
–1
–1
-70
Typ.[3] Max.
0.4
VCC +
0.3V
0.8
+1
+1
7
15
1.5
3
7
15
Unit
V
V
V
V
µA
µA
mA
µA
Capacitance[5]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = VCC(typ.)
Max.
Unit
6
pF
8
pF
Thermal Resistance
Description
Test Conditions
Thermal Resistance
(Junction to Ambient)[5]
Still Air, soldered on a 4.25 × 1.125 inch, four-layer
printed circuit board
Thermal Resistance
(Junction to Case)[5]
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
Symbol
ΘJA
ΘJC
BGA
55
16
Units
°C/W
°C/W
Document #: 38-05203 Rev. **
Page 3 of 12
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