CY62146CV30 Ver la hoja de datos (PDF) - Cypress Semiconductor

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Lista de partido

CY62146CV30

256K x 16 Static RAM

Cypress Semiconductor 

CY62146CV30 MoBL™

AC Test Loads and Waveforms

R1

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

ALL INPUT PULSES

VCC Typ

10%

90%

R2

GND

Rise TIme: 1 V/ns

90%

10%

Fall Time: 1 V/ns

Equivalent to:

THÉVENIN EQUIVALENT

OUTPUT

RTH

VTH

Parameters

R1

R2

RTH

VTH

3.0V

1.105

1.550

0.645

1.75V

Data Retention Characteristics (Over the Operating Range)

Parameter

Description

Conditions

Min.

Typ.[3]

VDR

VCC for Data Retention

1.5

ICCDR

tCDR[5]

Data Retention Current

Chip Deselect to Data

Retention Time

VCC= 1.5V

CE > VCC – 0.2V,

VIN > VCC – 0.2V or

VIN < 0.2V

3

0

tR[6]

Operation Recovery Time

tRC

Note:

6. Full device AC operation requires linear VCC ramp from VDR to VCC(min.) > 100µs or stable at VCC(min.) >100 µs.

Unit

KOhms

KOhms

KOhms

Volts

Max.

Vccmax

10

Unit

V

µA

ns

ns

Document #: 38-05203 Rev. **

Page 4 of 12

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