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IRHQ6110
(Rev.:2004)

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

IRHQ6110

Pre-Irradiation

Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

BVDSS

Drain-to-Source Breakdown Voltage 100

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

Voltage

RDS(on)

Static Drain-to-Source On-State

—

Resistance

—

VGS(th)

Gate Threshold Voltage

2.0

gfs

Forward Transconductance

1.4

IDSS

Zero Gate Voltage Drain Current

—

—

IGSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS + LD

Gate-to-Source Leakage Forward

—

Gate-to-Source Leakage Reverse

—

Total Gate Charge

—

Gate-to-Source Charge

—

Gate-to-Drain (‘Miller’) Charge

—

Turn-On Delay Time

—

Rise Time

—

Turn-Off Delay Time

—

Fall Time

—

Total Inductance

—

Typ Max Units

—— V

0.11 — V/°C

Test Conditions

VGS = 0V, ID = 1.0mA

Reference to 25°C, ID = 1.0mA

— 0.62

— 0.60 Ω

— 4.0 V

— — S( )

—

—

25

250

µA

— 100

— -100 nA

— 17

— 4.0 nC

— 5.5

VGS = 12V, ID = 3.0A ➃

VGS = 12V, ID = 1.9A

VDS = VGS, ID = 1.0mA

VDS > 15V, IDS = 1.9A ➃

VDS= 80V, VGS=0V

VDS = 80V,

VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

VGS = 12V, ID = 3.0A

VDS = 50V

— 13

— 16

— 23 ns

VDD = 50V, ID = 3.0A,

VGS = 12V, RG = 7.5Ω

— 15

6.1 — nH Measured from the center of

drain pad to center of source pad

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

— 270 —

— 110 — pF

— 23 —

VGS = 0V, VDS = 25V

f = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS Continuous Source Current (Body Diode)

ISM Pulse Source Current (Body Diode) ➀

—

—

—

—

3.0

12

A

VSD Diode Forward Voltage

— — 1.2 V

trr Reverse Recovery Time

— — 173 nS

QRR Reverse Recovery Charge

— — 863 nC

Tj = 25°C, IS = 3.0A, VGS = 0V ➃

Tj = 25°C, IF = 3.0A, di/dt ≤ 100A/µs

VDD ≤ 25V ➃

ton Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

RthJC

Junction-to-Case

Min Typ Max Units

— — 10.4 °C/W

Test Conditions

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes, refer to the last page

2

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