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IRHQ6110
(Rev.:2004)

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

Pre-Irradiation

IRHQ6110

Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified)

Parameter

BVDSS

Drain-to-Source Breakdown Voltage

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

Voltage

RDS(on)

Static Drain-to-Source On-State

Resistance

VGS(th)

gfs

IDSS

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

IGSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS + LD

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

Min

-100

—

—

-2.0

1.1

—

—

—

—

—

—

—

—

—

—

—

—

Typ Max Units

Test Conditions

——

V

VGS = 0V, ID = -1.0mA

-0.10 — V/°C Reference to 25°C, ID = -1.0mA

— 1.1 Ω

VGS = -12V, ID = -1.5A ➃

— -4.0 V

— — S( )

—

—

-25

-250

µA

— -100

— 100 nA

— 16

— 4.3 nC

— 3.3

VDS = VGS, ID = -1.0mA

VDS > -15V, IDS = -1.5A ➃

VDS= -80V, VGS=0V

VDS = -80V,

VGS = 0V, TJ = 125°C

VGS = -20V

VGS = 20V

VGS = -12V, ID = -2.3A

VDS = -50V

— 21

— 17

— 32 ns

VDD = -50V, ID = -2.3A,

VGS = -12V, RG = 7.5Ω

— 32

6.1 — nH Measured from the center of

drain pad to center of source pad

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

— 285 —

— 90 — pF

— 13 —

VGS = 0V, VDS = -25V

f = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS Continuous Source Current (Body Diode)

ISM Pulse Source Current (Body Diode) ➀

—

—

—

—

-2.3

-9.2

A

VSD Diode Forward Voltage

— — -3.0 V

Tj = 25°C, IS = -2.3A, VGS = 0V ➃

trr Reverse Recovery Time

— — 138 nS Tj = 25°C, IF = -2.3A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

— — 555 nC

VDD ≤ -25V ➃

ton Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

RthJC

Junction-to-Case

Min Typ Max Units

— — 10.4 °C/W

Test Conditions

For footnotes, refer to the last page

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