M6MGB166S2BWG Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

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M6MGB166S2BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

MITSUBISHI ELECTRIC  

BLOCK DIAGRAM

16Mb Flash Memory

F-A19

F-A18

F-A17

A16

A15

A14

A13

A12

A11

ADDRESS

INPUTS

A10

A9

A8

A7

A6

A5

A4

A3

A2

A1

A0

FLASH CHIP ENABLE INPUT

FLASH OUTPUT ENABLE INPUT

FLASH WRITE ENABLE INPUT

FLASH WRITE PROTECT INPUT

FLASH RESET/POWER DOWN INPUT

F-CE#

F-OE#

F-WE#

F-WP#

F-RP#

FLASH READY/BUSY OUTPUT F-RY/BY#

2Mb SRAM

A0

A1

A15

A16

S-CE1#

S-CE2

S-LB#

S-UB#

S-WE#

S-OE#

2

MITSUBISHI LSIs

M6MGB/T166S2BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS

3.3V-ONLY FLASH MEMORY &

2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM

Stacked-CSP (Chip Scale Package)

X-DECODER

Y-DECODER

128 WORD PAGE BUFFER

Main Block

32KW

28

Main Block

Parameter Block7

Parameter Block6

Parameter Block5

Parameter Block4

Parameter Block3

Parameter Block2

Parameter Block1

Boot Block

32KW

16KW

16KW

16KW

16KW

16KW

16KW

16KW

16KW

Y-GATE / SENSE AMP.

F-VCC

F-GND/GND

STATUS / ID REGISTER

CUI

WSM

MULTIPLEXER

INPUT/OUTPUT

BUFFERS

DQ15 DQ14DQ13DQ12

DQ3DQ2DQ1DQ0

DATA INPUTS/OUTPUTS

131072 WORD x

16 BITS

DQ 0

DQ 7

DQ 8

CLOCK

GENERATOR

DQ15

S-VCC

GND

Nov 1999 , Rev.2.3

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