RMWB11001 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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RMWB11001 Datasheet PDF : 6 Pages
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Electrical Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Current (Idq) = 36mA
Parameter
Frequency Range
Gate Supply Voltage1 (Vg)
Gain Small Signal (Pin = -10dBm)
Gain Variation vs. Frequency
Power Output Saturated: (Pin = 2dBm)
Drain Current at Psat (Pin = 2dBm)
Power Added Efficiency (PAE): at Psat
Input Return Loss (Pin = -10dBm)
Output Return Loss (Pin = -10dBm)
Noise Figure
Detector Voltage (Pout = +18dBm)
Min
Typ
Max
10.5
11.7
-0.5
18
21
0.5
17
19
55
35
13
18
4
0.5
Note:
1: Typical range of gate voltage is -0.8 to 0.2V to set typical Idq of 36mA.
Units
GHz
V
dB
dB
dBm
mA
%
dB
dB
dB
V
Functional Block Diagram1
Drain Supply Drain Supply
Vd1
Vd2
RF IN
MMIC Chip
RF OUT
Ground
(Back of Chip)
Gate Supply
Vg
Output Power
Detector Voltage Vdet
Note:
1: Detector delivers approx. 0.5V DC into 3kΩ load resistor for > +18dBm output power. If output power level detection is not desired, do not make connection to
detector bond pad.
©2004 Fairchild Semiconductor Corporation
RMWB11001 Rev. C
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