RMWB11001 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Lista de partido
RMWB11001 Datasheet PDF : 6 Pages
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Performance Data
RMWB11001, 11GHz Buffer Amplifier, Typical Performance
On-wafer Measurements, Vd=4V, Idq=36mA
25
0
S21
20
-5
15
-10
S11
10
-15
S22
5
-20
0
9.5
25
10
10.5
11
11.5
Frequency (GHz)
RMWB11001, 11GHz Buffer Amplifier,
Typical Performance, Vd=4V, Idq=36mA
Chip Bonded into 50Ω Test Fixture
-25
12
20
15
10
5
-16
Pout @ 10.5GHz
Gain @ 10.5GHz
Pout @ 11.1GHz
Gain @ 11.1GHz
Pout @ 11.7GHz
Gain @ 11.7GHz
-12
-8
-4
0
4
Input Power (dBm)
RMWB11001, Typical Performance Variation with Temperature,
Vd=4V, Idq=36mA, Chip Bonded into 50Ω Test Fixture
21
20
19
18
17
16
15
10.75
11
11.25
11.5
11.75
12
Frequency (GHz)
30
20
10
0
-10
-20
-30
-40
-50
-60
0
RMWB11001, 11GHz Buffer Amplifier,
Typical Performance, Vd=4V, Idq=36mA
Chip Bonded into 50Ω Test Fixture
S21
S11
S22
5
10 15 20 25 30 35
Frequency (GHz)
10
5
0
-5
-10
-15
-20
40
RMWB11001, 11GHz Buffer Amplifier,
Typical Performance, Vd=4V, Idq=36mA
Detector Voltage into 3kΩ load at Pout=+18dBm
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10.5
10.7
10.9
11.1
11.3
11.5
11.7
Frequency (GHz)
RMWB11001, Typical Performance Variation with Temperature,
Vd=4V, Idq=36mA, Chip Bonded into 50Ω Test Fixture
19
18
17
16
15
10.75
11
11.25
11.5
11.75
12
Frequency (GHz)
©2004 Fairchild Semiconductor Corporation
RMWB11001 Rev. C
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