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IRF5801

SMPS MOSFET

International Rectifier 

IRF5801

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

200

–––

–––

3.0

–––

–––

–––

–––

–––

0.26

–––

–––

–––

–––

–––

–––

–––

–––

2.2

5.5

25

250

100

-100

V

V/°C

Ω

V

µA

nA

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA ƒ

VGS = 10V, ID = 0.36A ƒ

VDS = VGS, ID = 250µA

VDS = 200V, VGS = 0V

VDS = 160V, VGS = 0V, TJ = 150°C

VGS = 30V

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max.

gfs

Forward Transconductance

0.44 ––– –––

Qg

Total Gate Charge

––– 3.9 –––

Qgs

Gate-to-Source Charge

––– 0.8 –––

Qgd

Gate-to-Drain ("Miller") Charge

––– 2.2 –––

td(on)

Turn-On Delay Time

––– 6.5 –––

tr

Rise Time

––– 8.0 –––

td(off)

Turn-Off Delay Time

––– 8.8 –––

tf

Fall Time

––– 19 –––

Ciss

Input Capacitance

––– 88 –––

Coss

Output Capacitance

––– 18 –––

Crss

Reverse Transfer Capacitance

––– 6.3 –––

Coss

Output Capacitance

––– 102 –––

Coss

Output Capacitance

––– 8.4 –––

Coss eff. Effective Output Capacitance

––– 26 –––

Units

S

nC

ns

pF

Conditions

VDS = 50V, ID = 0.36A

ID = 0.36A

VDS = 160V

VGS = 10V

VDD = 100V

ID = 0.36A

RG = 53Ω

VGS = 10V ƒ

VGS = 0V

VDS = 25V

ƒ = 1.0MHz

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 160V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 160V …

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche Energy‚

IAR

Avalanche Current

Typ.

–––

–––

Max.

9.9

0.6

Units

mJ

A

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 1.8

A showing the

integral reverse

G

––– ––– 4.8

p-n junction diode.

S

––– ––– 1.3

––– 45 –––

––– 54 –––

V TJ = 25°C, IS = 0.36A, VGS = 0V ƒ

ns TJ = 25°C, IF = 0.36A

nC di/dt = 100A/µs ƒ

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