IRF5801 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF5801 Datasheet PDF : 8 Pages
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IRF5801
160
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
120
Coss = Cds + Cgd
Ciss
80
40
0
1
Coss
Crss
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 0.36A
16
VDS= 160V
VDS= 100V
VDS= 40V
12
8
4
0
0
1
2
3
4
5
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150° C
1
TJ = 25°C
0.1
0.4
V GS= 0 V
0.5 0.6 0.7 0.8 0.9 1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
10us
1
100us
1ms
0.1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.01
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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