IRF5801 Ver la hoja de datos (PDF) - International Rectifier

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IRF5801

SMPS MOSFET

International Rectifier 

IRF5801

12.000

10.000

8.000

6.000

VGS = 10V

4.000

2.000

0.000

0

1

2

3

4

5

ID , Drain Current ( A )

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

2.500

2.250

2.000

1.750

ID = 0.6A

1.500

6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0

VGS, Gate -to -Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

25

 TOP

ID

0.4A

0.7A

20

BOTTOM 0.9A

15

10

V (B R )D SS

tp

IAS

VDS

L

RG

20V

tp

D.U .T

IA S

0.0 1Ω

15V

DRIVER

+

- VD D

A

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

6

5

0

25

50

75

100

125

150

Starting TJ, Junction Temperature (° C)

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

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