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T15M1024A

128K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

AC CHARACTERISTICS

(Vcc= +5V / ±10%, Gnd = 0V, Ta = 0 ~ +70 °C /-40°C to 85°C)

T15M1024A

(1) READ CYCLE

PARAMETER

Read Cycle Time

Address Access Time

Chip Enable Access Time

Output Enable Access Time

Output Hold from Address Change

Chip Enable to Output in Low-Z

Chip Disable to Output in High-Z

Output Enable to Output in Low-Z

Output Disable to Output in High-Z

SYM.

tRC

tAA

tACE

tOE

tOH

tLZ

tHZ

tOLZ

tOHZ

-45

Min Max

45 -

- 45

- 45

- 22

10 -

7-

- 15

5-

- 15

-55

Min Max

55 -

- 55

- 55

- 25

10 -

10 -

- 20

5-

- 20

-70

Min Max

70 -

- 70

- 70

- 35

10 -

10 -

- 25

5-

- 25

-100

Min Max

100 -

- 100

- 100

- 50

10 -

10 -

- 30

5-

- 30

UNIT

ns

ns

ns

ns

ns

ns

ns

ns

ns

(2)WRITE CYCLE

PARAMETER

Write Cycle Time

Chip Enable to Write End

Address Valid to Write End

Address Setup Time

Write Pulse Width

Write Recovery Time

Data Valid to Write End

Data Hold Time

Write Enable to Output in High-Z

Output Active from Write End

SYM.

tWC

tCW

tAW

tAS

tWP

tWR

tDW

tDH

tWHZ

tOW

-45

Min Max

45 -

40 -

40 -

0-

35 -

0-

20 -

0-

- 15

5-

-55

Min Max

55 -

50 -

50 -

0-

45 -

0-

25 -

0-

- 20

5-

-70

Min Max

70 -

60 -

60 -

0-

50 -

0-

30 -

0-

- 25

5-

-100

Min Max

100 -

80 -

80 -

0-

70 -

0-

40 -

0-

- 30

5-

UNIT

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

TM Technology Inc. reserves the right

P. 6

to change products or specifications without notice.

Publication Date: OCT. 2004

Revision:C

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