T15M1024A Ver la hoja de datos (PDF) - Taiwan Memory Technology

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T15M1024A

128K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

DATA RETENTION CHARACTERISTICS

T15M1024A

PARAMETER

SYM.

VCC for Data Retention

VDR

Data Retention Current

ICCDR

Chip Deselect to Data Retention

tCDR

Time

Operation Recovery Time

tR

* 0 ~ +70 °C / -40 ~ +85 °C,VCC=3V

TEST CONDITION

CE1 ≥ VDD -0.2V

CE2 ≤ 0.2V

VIN ≥ Vcc -0.2V or

VIN ≤ 0.2V

DATA RETENTION WAVEFORM

(Ta = 0 ~ +70 °C /-40°C to 85°C)

Data Retention Mode

MIN.

1.5

-

0

tRC

MAX.

-

5*

-

-

UNIT

V

uA

ns

ns

VCC

V cc_typ

tCDR

VDR > 1.5V

tRVcc_TYP

CE1>VCC-0.2V

CE1

V IH

V IH

TM Technology Inc. reserves the right

P. 9

to change products or specifications without notice.

Publication Date: OCT. 2004

Revision:C

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