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VNN7NV04P-E

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

VNN7NV04P-E, VNS7NV04P-E

OMNIFET II

fully autoprotected Power MOSFET

Features

Type

RDS(on)

Ilim

Vclamp

VNN7NV04P-E 60 mΩ

6A

VNS7NV04P-E

40 V

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

■ Direct access to the gate of the Power

MOSFET (analog driving)

■ Compatible with standard Power MOSFET in

compliance with the 2002/95/EC European

Directive

2

3

2

1

SOT-223

SO-8

Description

The VNN7NV04P-E, VNS7NV04P-E, are

monolithic devices designed in

STMicroelectronics VIPower™ M0-3 Technology,

intended for replacement of standard Power

MOSFETs from DC up to 50 kHz applications.

Built in thermal shutdown, linear current limitation

and overvoltage clamp protect the chip in harsh

environments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

September 2013

Table 1. Device summary

Package

Order codes

Tube

Tape and reel

SOT-223

-

VNN7NV04PTR-E

SO-8

VNS7NV04P-E VNS7NV04PTR-E

Doc ID 15632 Rev 4

1/29

www.st.com

1

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