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VNN7NV04P-E

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

VNN7NV04P-E, VNS7NV04P-E

Electrical specifications

2.2

Thermal data

Table 3. Thermal data

Symbol

Parameter

Value

Unit

SOT-223

SO-8

Rthj-case Thermal resistance junction-case max

18

°C/W

Rthj-lead

Rthj-amb

Thermal resistance junction-lead max

Thermal resistance junction-ambient max

96(1)

27

90(1)

°C/W

°C/W

1. When mounted on a standard single-sided FR4 board with 0.5 mm2 of Cu (at least 35 µm thick) connected

to all DRAIN pins.

2.3

Electrical characteristics

-40 °C < Tj < 150 °C, unless otherwise specified.

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Off

VCLAMP

VCLTH

VINTH

IISS

VINCL

IDSS

On

Drain-source clamp

voltage

VIN = 0 V; ID = 3.5 A

Drain-source clamp

threshold voltage

VIN = 0 V; ID = 2 mA

Input threshold voltage VDS = VIN; ID = 1 mA

Supply current from input

pin

VDS = 0 V; VIN = 5 V

Input-source clamp

voltage

Zero input voltage drain

current (VIN = 0 V)

IIN = 1 mA

IIN = -1 mA

VDS = 13 V; VIN = 0 V; Tj = 25 °C

VDS = 25 V; VIN = 0 V

RDS(on)

Static drain-source on

resistance

VIN = 5 V; ID = 3.5 A; Tj = 25 °C

VIN = 5 V; ID = 3.5 A

Dynamic (Tj = 25 °C, unless otherwise specified)

gfs(1)

Forward

transconductance

VDD = 13 V; ID = 3.5 A

COSS Output capacitance

VDS = 13 V; f = 1 MHz; VIN = 0 V

Min Typ Max Unit

40

45 55

V

36

V

0.5

2.5 V

100 150 µA

6

6.8

8

V

-1.0

-0.3 V

30 µA

75 µA

65 mΩ

130 mΩ

9

S

220

pF

Doc ID 15632 Rev 4

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