VNN7NV04P-E Ver la hoja de datos (PDF) - STMicroelectronics
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VNN7NV04P-E Datasheet PDF : 29 Pages
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Electrical specifications
VNN7NV04P-E, VNS7NV04P-E
Table 4. Electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min Typ Max Unit
Switching (Tj = 25 °C, unless otherwise specified)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
(dI/dt)on Turn-on current slope
Qi
Total input charge
VDD = 15 V; ID = 3.5 A;
Vgen = 5 V; Rgen = RIN MIN = 150 Ω;
(see figure Figure 4)
VDD = 15 V; ID = 3.5 A;
Vgen = 5 V; Rgen = 2.2 KΩ;
(see figure Figure 4)
VDD = 15 V; ID = 3.5 A; Vgen = 5 V;
Rgen = RIN MIN = 150 Ω
VDD = 12 V; ID = 3.5 A; VIN = 5 V;
Igen = 2.13 mA (see figure Figure 7)
100 300 ns
470 1500 ns
500 1500 ns
350 1000 ns
0.75 2.3 µs
4.6 14.0 µs
5.4 16.0 µs
3.6 11.0 µs
6.5
A/µs
18
nC
Source drain diode (Tj = 25 °C, unless otherwise specified)
VSD(1) Forward on voltage
ISD = 3.5 A; VIN = 0 V
trr
Qrr
IRRM
Reverse recovery time ISD = 3.5 A; dI/dt = 20 A/µs;
Reverse recovery charge VDD = 30 V; L = 200 µH;
Reverse recovery current (see test circuit, figure Figure 5)
0.8
V
220
ns
0.28
µC
2.5
A
Protections (-40 °C < Tj < 150 °C, unless otherwise specified)
Ilim
Drain current limit
VIN = 5 V; VDS = 13 V
tdlim
Step response current
limit
VIN = 5 V; VDS = 13 V
6
9
12
A
4.0
µs
Tjsh
Overtemperature
shutdown
150 175 200 °C
Tjrs Overtemperature reset
135
°C
Igf
Fault sink current
VIN = 5 V; VDS = 13 V; Tj = Tjsh
15
mA
Eas
Single pulse avalanche
energy
starting Tj = 25 °C; VDD = 24 V; VIN = 5 V;
Rgen = RIN MIN = 150 Ω; L = 24 mH;
(see Figure 6 and Figure 8)
200
mJ
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
8/29
Doc ID 15632 Rev 4
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