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IRG4PSC71UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4PSC71UD

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage –––

VCE(on)

Collector-to-Emitter Saturation Voltage –––

–––

–––

VGE(th)

Gate Threshold Voltage

3.0

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage –––

gfe

Forward Transconductance „

47

ICES

Zero Gate Voltage Collector Current –––

–––

VFM

Diode Forward Voltage Drop

–––

–––

IGES

Gate-to-Emitter Leakage Current

–––

––– ––– V

0.39 ––– V/°C

1.67 2.0

1.95 –––

1.71 ––– V

––– 6.0

-13 ––– mV/°C

70 ––– S

––– 500 µA

––– 13 mA

1.4 1.7

V

1.3 –––

––– ±100 nA

VGE = 0V, IC = 250µA

VGE = 0V, IC = 10mA

IC = 60A

VGE = 15V

IC = 100A

See Fig. 2, 5

IC = 60A, TJ = 150°C

VCE = VGE, IC = 250µA

VCE = VGE, IC = 1.5mA

VCE = 50V, IC = 60A

VGE = 0V, VCE = 600V

VGE = 0V, VCE = 600V, TJ = 150°C

IC = 60A

See Fig. 13

IC = 60A, TJ = 150°C

VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

trr

Irr

Qrr

di(rec)M/dt

During tb

2

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Diode Reverse Recovery Time

Diode Peak Reverse Recovery Current

Diode Reverse Recovery Charge

Diode Peak Rate of Fall of Recovery

––– 340 520

––– 44 66

––– 160 240

––– 90 –––

––– 94 –––

––– 245 368

––– 110 167

––– 3.26 –––

––– 2.27 –––

––– 5.53 7.2

––– 91 –––

––– 88 –––

––– 353 –––

––– 150 –––

––– 7.1 –––

––– 13 –––

––– 7500 –––

––– 720 –––

––– 93 –––

––– 82 120

––– 140 210

––– 8.2 12

––– 13 20

––– 364 546

––– 1084 1625

––– 328 –––

––– 266 –––

nC

ns

mJ

ns

mJ

nH

pF

ns

A

nC

A/µs

IC = 60A

VCC = 400V

See Fig. 8

VGE = 15V

TJ = 25°C

IC = 60A, VCC = 480V

VGE = 15V, RG = 5.0Ω

Energy losses include "tail" and

diode reverse recovery.

See Fig. 9, 10, 11, 18

TJ = 150°C, See Fig. 9, 10, 11, 18

IC = 60A, VCC = 480V

VGE = 15V, RG = 5.0Ω

Energy losses include "tail" and

diode reverse recovery.

Measured 5mm from package

VGE = 0V

VCC = 30V

See Fig. 7

ƒ = 1.0MHz

TJ = 25°C See Fig.

TJ = 125°C 14

IF = 60A

TJ = 25°C See Fig.

TJ = 125°C 15

VR = 200V

TJ = 25°C See Fig.

TJ = 125°C

16 di/dt = 200A/µs

TJ = 25°C See Fig.

TJ = 125°C

17

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