IRG4PSC71UD Ver la hoja de datos (PDF) - International Rectifier

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IRG4PSC71UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

80

60

Square wave:

40

60% of rated

voltage

I

20

Ideal diodes

0

0.1

IRG4PSC71UD

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

G ate drive as specified

P ow er D is s ipation = 58 W

1

10

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000

100

10

TJ = 25 °C

TJ = 150 °C

1000

TJ = 150 °C

100

TJ = 25 °C

10

VGE = 15V

80µs PULSE WIDTH

1

1.0

1.5

2.0

2.5

3.0

3.5

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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VCC = 50V

5µs PULSE WIDTH

1

5

6

7

8

9

10

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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