IRG4PSC71UD Ver la hoja de datos (PDF) - International Rectifier

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IRG4PSC71UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4PSC71UD

14000

12000

10000

8000

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

6000

4000

2000

Coes

Cres

0

1

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

12.0

VCC = 480V

VGE = 15V

11.0 TJ = 25 ° C

IC = 60A

10.0

9.0

8.0

7.0

6.0

5.0

0

10

20

30

40

50

RGR,GG, aGtaeteRReseissistatannccee ( Ω )

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

20

VCC = 400V

I C = 60A

16

12

8

4

0

0

100

200

300

400

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

RG = 55..00ΩOhm

VGE = 15V

VCC = 480V

IC = 120 A

10

IC = 60 A

IC = 30 A

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature °( C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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