IRG4BC20MD Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRG4BC20MD
International Rectifier
IRG4BC20MD Datasheet PDF : 10 Pages
| |||
IRG4BC20MD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
4.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ----
gfe
Forward Transconductance
3.0
ICES
Zero Gate Voltage Collector Current ----
----
VFM
Diode Forward Voltage Drop
----
----
IGES
Gate-to-Emitter Leakage Current
----
---- ---- V
0.67 ---- V/°C
1.85 2.1
2.46 ---- V
2.07 ----
---- 6.5
-11 ---- mV/°C
3.6 ---- S
---- 250 µA
---- 2500
1.4 1.7 V
1.3 1.6
---- ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 11A
VGE = 15V
IC = 18A
See Fig. 2, 5
IC = 11A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 11A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Min.
Total Gate Charge (turn-on)
----
Gate - Emitter Charge (turn-on)
----
Gate - Collector Charge (turn-on)
----
Turn-On Delay Time
----
Rise Time
----
Turn-Off Delay Time
----
Fall Time
----
Turn-On Switching Loss
----
Turn-Off Switching Loss
----
Total Switching Loss
----
Turn-On Delay Time
----
Rise Time
----
Turn-Off Delay Time
----
Fall Time
----
Total Switching Loss
----
Internal Emitter Inductance
----
Input Capacitance
----
Output Capacitance
----
Reverse Transfer Capacitance
----
Diode Reverse Recovery Time
----
----
Diode Peak Reverse Recovery Current ----
----
Diode Reverse Recovery Charge
----
----
Diode Peak Rate of Fall of Recovery ----
During tb
----
Typ. Max.
39 59
5.3 8.0
20 30
21 ----
37 ----
463 690
340 510
0.41 ----
2.03 ----
2.44 3.7
19 ----
41 ----
590 ----
600 ----
3.49 ----
7.5 ----
460 ----
54 ----
14 ----
37 55
55 90
3.5 5.0
4.5 8.0
65 138
124 360
240 ----
210 ----
Units
nC
ns
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 11A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 11A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 8.0A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
2
www.irf.com
Share Link: