IRG4BC20MD Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC20MD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

800

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

600

Cies

400

200

0

1

Coes

Cres

10

100

VCE, Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4BC20MD

20

VCC = 400V

I C = 11A

16

12

8

4

0

0

10

20

30

40

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

2.5

VCC = 480V

VGE = 15V

TJ = 25°C

I C = 11A

2.4

100

RG = 50Ω

VGE = 15V

VCC= 480V

10

1

IC = 22A

IC = 11A

IC = 5.5A

2.3

0

10

20

30

40

50

RG, Gate Resistance ( Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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