IRG4BC20MD Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC20MD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC20MD

10.0

RG = 50Ω

TJ = 150°C

8.0 VGE = 15V

VCC = 480V

6.0

4.0

2.0

0.0

5

10

15

20

25

IC, Collector Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

100

VGE = 20V

TJ = 125°

SAFE OPERATING AREA

10

1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig. 12 - Turn-Off SOA

10

TJ = 15 0°C

TJ = 12 5°C

TJ = 2 5°C

1

0.1

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Forward Voltage Drop - V FM (V)

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6

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