IRG4PH30 Ver la hoja de datos (PDF) - International Rectifier

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IRG4PH30

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

PD -91580A

INSULATED GATE BIPOLAR TRANSISTOR

Features

• High short circuit rating optimized for motor control,

tsc =10µs, VCC = 720V , TJ = 125°C,

VGE = 15V

• Combines low conduction losses with high

switching speed

• Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

IRG4PH30K

Short Circuit Rated

UltraFast IGBT

C

VCES = 1200V

G

E

n-channel

VCE(on) typ. = 3.10V

@VGE = 15V, IC = 10A

Benefits

• As a Freewheeling Diode we recommend our

HEXFREDTM ultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

• Latest generation 4 IGBT's offer highest power

density motor controls possible

• This part replaces the IRGPH30K and IRGPH30M

devices

Absolute Maximum Ratings

VCES

IC @ TC = 25°C

IC @ TC = 100°C

ICM

ILM

tsc

VGE

EARV

PD @ TC = 25°C

PD @ TC = 100°C

TJ

TSTG

Parameter

Collector-to-Emitter Voltage

Continuous Collector Current

Continuous Collector Current

Pulsed Collector Current Q

Clamped Inductive Load Current R

Short Circuit Withstand Time

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy S

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

Thermal Resistance

RθJC

RθCS

RθJA

Wt

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

www.irf.com

TO-247AC

Max.

1200

20

10

40

40

10

±20

121

100

42

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Units

V

A

µs

V

mJ

W

°C

Typ.

–––

0.24

–––

6 (0.21)

Max.

1.2

–––

40

–––

Units

°C/W

g (oz)

1

2/7/2000

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