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IRG4PH30 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
IRG4PH30
IR
International Rectifier IR
IRG4PH30 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRG4PH30K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.19
3.10 4.2
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 2.0mA
IC = 10A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance U
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
3.90
V
IC = 20A
See Fig.2, 5
3.01
IC = 10A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-12 mV/°C VCE = VGE, IC = 250µA
4.3 6.5 S VCE = 100 V, IC = 10A
— — 250 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 2000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
10
Typ.
53
9.0
21
28
23
200
110
0.64
0.92
1.56
27
26
310
330
3.18
13
800
60
14
Max.
80
14
32
300
170
2.4
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
Conditions
IC = 10A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC =10A, VCC = 960V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 9,10,14
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 23
TJ = 150°C,
IC = 10A, VCC = 960V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =23,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2
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