IRG4PH30 Ver la hoja de datos (PDF) - International Rectifier

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IRG4PH30

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

1200

1000

800

 VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

 Cies

600

400

200

0

1

C oes

C res

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4PH30K

 20

VCC = 400V

I C = 10A

15

10

5

0

0

10

20

30

40

50

60

QG, Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

 3.0 VCC = 960V

VGE = 15V

TJ = 25 °C

IC = 10A

2.5

2.0

1.5

 100 RG = O23hΩm

VGE = 15V

VCC = 960V

10

1

 IC = 20 A

 IC = 10 A

 IC = 5 A

1.0

0

10

20

30

40

50

RRGG , ,GGaateteRReseisstiasntacnec(eΩ(O) hm)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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